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PDF 2SK3458 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3458 | |
| Descripción | MOS Field Effect Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
MOS Field Effect Transistor
2SK3458
MOSFET
Features
Low gate charge
QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A)
Avalanche capability ratings
Surface mount package available
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
800
30
6.0
24
100
1.5
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=800V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=3.0A
VGS=10V,ID=3.0A
VDS=10V,VGS=0,f=1MHZ
ID=3.0A,VGS(on)=10V,RG=10
,VDD=150V
ID =6.0A, VDD =450V, VGS = 10 V
Min Typ Max Unit
100 A
100 A
2.5 3.5 V
2.0 S
1.8 2.2
1220
pF
170 pF
16 pF
17 ns
7 ns
43 ns
11 ns
25 nC
6 nC
10 nC
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SK3458.PDF ] | |
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