파트넘버.co.kr 2SD2209 데이터시트 PDF


2SD2209 반도체 회로 부품 판매점

Silicon NPN triple diffusion planar type Darlington



Panasonic 로고
Panasonic
2SD2209 데이터시트, 핀배열, 회로
Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
For power amplification and switching
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Ratings
100±15
100±15
5
8
4
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2*1
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
VBE(sat)
fT
ton
tstg
tf
Es/b*2
Conditions
VCB = 85V, IE = 0
VEB = 5V, IC = 0
IC = 5mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
IC = 3A, IB = 12mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
IC = 1A, L = 100mH, RBE = 100
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
85
1000
1000
typ max Unit
100 µA
2 mA
115 V
10000
2
V
4
2.5 V
20 MHz
0.3 µs
3.0 µs
1.0 µs
50 mJ
*1hFE2 Rank classification
Rank
Q
P
hFE2 1000 to 5000 2000 to 10000
*2Es/b Test circuit
Vin
tW
T.U.T
IB1
IC
–IB2
L coil
VCC
Vclamp
Internal Connection
C
B
E
Downloaded from Elcodis.com electronic components distributor
1
http://www.Datasheet4U.com


2SD2209 데이터시트, 핀배열, 회로
Power Transistors
25
20
(1)
15
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
10
5
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=250
30
10
3
TC=–25˚C
1 25˚C
100˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
IC — Lcoil
100
30
10
3
1
0.3
0.1
1 3 10 30 100
Load inductance Lcoil (mH)
IC — VCE
6
TC=25˚C
5
4
IB=2mA 1mA
0.75mA
0.5mA
3 0.15mA
2 0.1mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2209
VCE(sat) — IC
10
IC/IB=250
3
25˚C
1 TC=–25˚C
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
100000
hFE — IC
30000 TC=100˚C
10000
3000
25˚C
–25˚C
VCE=3V
1000
300
100
0.1
0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1 3 10 30 100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
1 300ms
t=1ms
10ms
0.1
0.01
1
10 100 1000
Collector to emitter voltage VCE (V)
2
Downloaded from Elcodis.com electronic components distributor
http://www.Datasheet4U.com




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( panasonic )

2SD2209 transistor

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