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PDF 2SC3279 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3279 | |
| Descripción | NPN Silicon Epitaxial Planar Transistor | |
| Fabricantes | PACO | |
| Logotipo |  |
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ST 2SC3279
NPN Silicon Epitaxial Planar Transistor
for storobo flash and medium power amplifier
applications.
The transistor is subdivided into four groups L, M,
N and P, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
VCBO
VCES
VCEO
VEBO
30
30
10
5
V
V
V
V
Collector Current (DC)
IC 2 A
Collector Current (Pulse Width = 10 ms)
ICP 5
A
Base Current
IB 0.2 A
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 500 mA
Current Gain Group
at VCE = 1 V, IC = 2 A
Collector Base Cutoff Current
at VCB = 30 V
Emitter Base Cutoff Current
at VEB = 6 V
Collector-Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 1 mA
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 50 mA
Base Emitter Voltage
at VCE = 1 V, IC = 2 A
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Transition Frequency
at VCE = 1 V, IC = 0.5 A
Ptot
Tj
Tstg
Symbol
L hFE
M hFE
N hFE
P hFE
hFE
ICBO
IEBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE
Cob
fT
750
150
- 55 to + 150
mW
OC
OC
Min. Typ. Max. Unit
140 - 240
200 - 330
300 - 450
420 - 600
70 200
-
- - 0.1
-
-
-
-
-
µA
- - 0.1 µA
10 - - V
6- -V
- 0.2 0.5 V
-
0.86
1.5
V
- 27 - pF
- 150 - MHz
Dated : 07/12/2002
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