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INCHANGE |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2484
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High Power Dissipation
·Complement to Type 2SA1060
APPLICATIONS
·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
80 V
wwwVCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
8A
60 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
http://www.Datasheet4U.com
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2484
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
IEBO Emitter Cutoff Current
VEB= 3V; IC= 0
2.0 V
1.8 V
50 μA
50 μA
hFE-1
DC Current Gain
IC= 20mA ; VCE= 5V
20
hFE-2
DC Current Gain
i.cnhFE-3
DC Current Gain
.iscsemfT Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
IC= 3A; VCE= 5V
IC= 0.5A; VCE= 5V
www hFE-2 Classifications
40
20
RQP
20
220
MHz
40-80 60-120 100-200
isc Website:www.iscsemi.cn
2
http://www.Datasheet4U.com
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