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ROHM Semiconductor |
EMD52
Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
<For DTr1(NPN)>
Parameter
VCC
IC(MAX.)
R1
R2
<For DTr2(PNP)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
50V
100mA
22kΩ
22kΩ
Value
-50V
-100mA
22kΩ
22kΩ
lOutline
EMT6
EMD52
(SC-107C)
lFeatures
1) DTA024E and DTC024E chip in a EMT6
package.
2) Transister elements are independent, eliminating
interface.
3) Mounting cost and area can be cut in half.
4) Lead Free/RoHS Compliant.
lInner circuit
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Part No.
Package
Package
size
EMD52
EMT6
1616
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
T2R 180
8
8000
Marking
D52
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© 2013 ROHM Co., Ltd. All rights reserved.
1/7
20131001 - Rev.002
http://www.Datasheet4U.com
EMD52
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol DTr1(NPN) DTr2(PNP) Unit
VCC
VIN
IO
IC(MAX)*1
PD*2 *3
Tj
Tstg
50 -50 V
40 to -10 -40 to 10 V
30 -30 mA
100 -100 mA
150(Total)
mW/Total
150 ℃
-55 to +150
℃
lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = 5V, IO = 0.1mA
VO = 0.3V, IO = 5mA
IO / II = 5mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 10V, IO = 5mA
-
-
VCE = 10V, IE = -5mA,
f = 100MHz
Values
Min. Typ. Max.
- - 0.5
3- -
- 0.05 0.15
- - 0.36
- - 0.5
60 -
-
15.4 22 28.6
0.8 1 1.2
Unit
V
V
mA
μA
-
kΩ
-
- 250 - MHz
lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -0.1mA
VO = -0.3V, IO = -5mA
IO / II = -5mA / -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -10V, IO = -5mA
-
-
Transition frequency
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor.
*2 terminal mounted on a reference footprint.
*3 120mW per element must not be exceeded.
Values
Min. Typ. Max.
- - -0.5
-3 -
-
- -0.07 -0.15
- - -0.36
- - -0.5
60 -
-
15.4 22 28.6
0.8 1 1.2
Unit
V
V
mA
μA
-
kΩ
-
- 250 - MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/7
20131001 - Rev.002
http://www.Datasheet4U.com
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