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EMD52 반도체 회로 부품 판매점

Complex Digital Transistors



ROHM Semiconductor 로고
ROHM Semiconductor
EMD52 데이터시트, 핀배열, 회로
EMD52
Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
<For DTr1(NPN)>
Parameter
VCC
IC(MAX.)
R1
R2
<For DTr2(PNP)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
50V
100mA
22kΩ
22kΩ
Value
-50V
-100mA
22kΩ
22kΩ
lOutline
EMT6
 
  
EMD52
(SC-107C)
              
lFeatures
1) DTA024E and DTC024E chip in a EMT6
package.
2) Transister elements are independent, eliminating
interface.
3) Mounting cost and area can be cut in half.
4) Lead Free/RoHS Compliant.
lInner circuit
 
 
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Part No.
Package
Package
size
EMD52
 
EMT6
 
1616
 
   
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
T2R 180
  
8
 
8000
 
   
Marking
D52
 
                                                                                        
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/7
20131001 - Rev.002
http://www.Datasheet4U.com


EMD52 데이터시트, 핀배열, 회로
EMD52
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol DTr1(NPN) DTr2(PNP) Unit
VCC
VIN
IO
IC(MAX)*1
PD*2 *3
Tj
Tstg
50 -50 V
40 to -10 -40 to 10 V
30 -30 mA
100 -100 mA
150(Total)
mW/Total
150
-55 to +150
lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = 5V, IO = 0.1mA
VO = 0.3V, IO = 5mA
IO / II = 5mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 10V, IO = 5mA
-
-
VCE = 10V, IE = -5mA,
f = 100MHz
Values
Min. Typ. Max.
- - 0.5
3- -
- 0.05 0.15
- - 0.36
- - 0.5
60 -
-
15.4 22 28.6
0.8 1 1.2
Unit
V
V
mA
μA
-
-
- 250 - MHz
lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -0.1mA
VO = -0.3V, IO = -5mA
IO / II = -5mA / -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -10V, IO = -5mA
-
-
Transition frequency
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor.
*2 terminal mounted on a reference footprint.
*3 120mW per element must not be exceeded.
Values
Min. Typ. Max.
- - -0.5
-3 -
-
- -0.07 -0.15
- - -0.36
- - -0.5
60 -
-
15.4 22 28.6
0.8 1 1.2
Unit
V
V
mA
μA
-
-
- 250 - MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/7
20131001 - Rev.002
http://www.Datasheet4U.com




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EMD52 transistor

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