파트넘버.co.kr NE021 데이터시트 PDF


NE021 반도체 회로 부품 판매점

NPN SILICON HIGH FREQUENCY TRANSISTOR



CEL 로고
CEL
NE021 데이터시트, 핀배열, 회로
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
LOW NOISE FIGURE: 1.5 dB at 500 MHz
HIGH POWER GAIN: 12 dB at 2 GHz
LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC gold,
platinum, titanium, and platinum-silicide metallization system to
provide the utmost in reliability. NE02107 is available in both
common-base and common-emitter configurations and has
been qualified for high-reliability space applications.
NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 5 mA
500 1.2 18.60
1000
1.5 13.82
1500
2.0 11.83
2000
2.4 9.36
2500
2.6 7.82
3000
3.6 7.51
3500
3.7 6.31
VCE = 10 V, IC = 20 mA
500 1.8 21.32
1000
1.9 16.15
1500
2.4 13.50
2000
2.9 11.02
2500
3.2 9.12
3000
3.9 8.10
3500
4.3 6.48
ΓOPT
MAG ANG
.36 69
.31 124
.50 165
.44 -175
.52 -161
.68 -141
.71 -139
.16 149
.33 169
.46 -179
.53 -167
.57 -154
.62 -139
.67 -134
Rn/50
.14
.12
.05
.06
.10
.14
.21
.15
.13
.09
.08
.14
.27
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
PLEASE NOTE:
The following part numbers from this datasheet are nonpromotive:
NE02100
NE02133
NE02139
The following part numbers from this datasheet are discontinued:
NE02107
NE02135
Please call sales office for details.
California Eastern Laboratories
Free Datasheet http://www.Datasheet4U.com


NE021 데이터시트, 핀배열, 회로
NE021 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE02100
00 (CHIP)
UNITS MIN TYP MAX
fT
|S21|2
NFMIN
ICBO
IEBO
hFE
CCB
RTH (J-C)
RTH (J-A)
PT5
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA
GHz
Insertion Power Gain at VCE = 10 V, IC = 20 mA,
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
dB
dB
dB
Minimum Noise Figure2 at
VCE = 10 V, IC = 3 mA, f = 0.5 GHz
VCE = 10 V, IC = 5 mA, f = 2 GHz
dB
dB
Collector Cutoff Current at VCB = 15 V, IE = 0
µA
Emitter Cutoff Current at VEB = 2 V, IC = 0
µA
Forward Current Gain at VCE = 10 V, IC = 20 mA
Collector to Base Capacitance4 at VCB = 10 V, IE = 0, f = 1 MHz pF
Thermal Resistance (Junction to Case)
°C/W
Thermal Resistance (Junction to Ambient)
°C/W
Total Power Dissipation
mW
5.5
20
580
4.5
18.5
13
6.5
1.5
2.7 4.5
1.0
1.0
70 250
0.6 1.0
70
700
NE02107
07/07B3
MIN TYP MAX
4.5
18.5
13
5.5 6.5
1.5
2.7 4.5
1.0
1.0
20 70 250
0.6 1.0
90
500
350 700
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
|S21E|2
NFMIN
ICBO
IEBO
hFE
CCB
RTH (J-C)
RTH (J-A)
PT5
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at VCE = 10 V,
IC = 20 mA
Insertion Power Gain at
VCE = 10 V, IC = 20 mA,
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
Minimum Noise Figure6 at
VCE = 10 V, IC = 3 mA,
f = 0.5 GHz
VCE = 10 V, IC = 5 mA,
f = 1 GHz
f = 2 GHz
Collector Cutoff Current at VCB = 15 V,
IE = 0
Emitter Cutoff Current at VEB = 2 V,
IC = 0
Forward Current Gain at
VCE = 10 V, IC = 20 mA
Collector to Base Capacitance4 at
VCB = 10 V, IE = 0 , f = 1 MHz
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
UNITS
NE02133
2SC2351
33
MIN TYP MAX
NE02135
2SC2149
35
MIN TYP MAX
NE02139
2SC4092
39
MIN TYP MAX
GHz 4.5 4.5 4.5
dB 15
dB 9 10
dB 4 5
18.5
13
5 5.7
9 10
dB
dB
dB
µA
µA
pF
°C/W
°C/W
mW
1.5 3
1.5
2.7 4.0
1.5
1.0 1.0 1.0
1.0 1.0 1.0
40 70 200 20 70 250 40 70 200
0.75 1.0
0.6 1.0
120
666 600
150 290
500
.75
500
200
Notes:
1. Electronic Industrial Association of Japan.
3. Common base electrical charactristics see S-Parameters.
5. Minimum dissipations based on RTH (J-A) for applications without effective
heat sink, maximum dissipations based on RTH (J-C) for applications with
effective heat sink.
2. Input and output are tuned for optimum noise figures.
4. CCB measurement employs a three-terminal capacitance bridge
incorporating a guard circuit. The emitter terminal shall be
connected to the guard terminal.
6. Output and Input are tuned for minimum noise figure.
Free Datasheet http://www.Datasheet4U.com




PDF 파일 내의 페이지 : 총 12 페이지

제조업체: CEL

( cel )

NE021 transistor

데이터시트 다운로드
:

[ NE021.PDF ]

[ NE021 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


NE021

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR - ETC



NE021

NPN SILICON HIGH FREQUENCY TRANSISTOR - NEC



NE021

NPN SILICON HIGH FREQUENCY TRANSISTOR - CEL



NE021

NPN Silicon High Frequency Transistor - NEC



NE02100

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR - ETC



NE02100

NPN SILICON HIGH FREQUENCY TRANSISTOR - CEL



NE02100

NPN Silicon High Frequency Transistor - NEC



NE02103

NPN Silicon High Frequency Transistor - NEC



NE02107

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR - ETC