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Eleflow |
Description
The Eleflow 2SC2053 is a silicon NPN epitaxial planar type transistor designed
for RF power amplifiers within the VHF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 15.7dB
@Vcc = 13.5V, Po = 150mW, f = 175MHz
• Emitter ballasted construction for reliability and performance.
• Manufactured incorporating recyclable RoHS compliant materials.
Application
Driver amplifier applications within the VHF band.
2SC2053
TO-92L Package
Absolute Maximum Ratings (Tc = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Vcbo
Vebo
Veco
Ic
Pc
Collector to base voltage
Emitter to base voltage
Collector to emitter voltage
Collector current
Collector dissipation
Rbe =
Ta = 25°C
Tj
Tstg
Rth-a
Rth-c
Junction temperature
Storage temperature
Thermal resistance
Note: Above parameters are guaranteed independently
Junction to ambient
Ratings
40
4
17
0.3
0.6
135
-55 to 135
183
Unit
V
V
V
A
W
°C
°C
°C/W
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol
Parameter
V(BR)ebo
V(BR)cbo
V(BR)ceo
Icbo
Iebo
hfe
Po
ηc
Emitter to base breakdown voltage
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC forward current gain*
Output power
Collector efficiency
Test Conditions
Limits
Min Typ Max
Ie = 1mA, Ic = 0
4
Ic = 1mA, Ie = 0
40
Ic = 10mA, Rbe =
17
Vcb = 15V, Ie = 0
20
Veb = 3V, Ic = 0
20
Vce = 10V, Ic = 10mA
10 50 180
Vcc = 13.5V, Pin = 4mW, F 150 200
= 175MHz
40 50
Unit
V
V
V
µA
µA
mW
%
Note: *Pulse test, Pw = 150µS, duty = 5%
Above parameters, ratings, limits and conditions are subject to change
______________________________________________________________________________________________________
www.eleflow.co.uk
All Rights Reserved
Specifications are subject to change without notification.
©Copyright 2010 Eleflow Technologies
Page 1 of 2 03/2010
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