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STA3250D 반도체 회로 부품 판매점

PNP Silicon Transistor



KODENSHI KOREA 로고
KODENSHI KOREA
STA3250D 데이터시트, 핀배열, 회로
Applications
Power amplifier application
High current switching application
Features
Low saturation voltage:
VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA
Large collector current capacity: IC=-2A
Small and compact SMD type package
“Green” device and RoHS compliant device
Available in full lead (Pb)-free device
STA3250D
PNP Silicon Transistor
PIN Connection
TO-252
Ordering Information
Type NO.
STA3250D
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
* : Single pulse, tp= 300
Marking
STA3250
: Year & Week Code
Symbol
Package Code
TO-252
Rating
[Ta=25]
Unit
VCBO
VCEO
VEBO
-50
-50
-5
V
V
V
IC
ICP*
PC(Ta= 25°C)
PC(TC= 25°C)
-2
-4
1
10
A(DC)
A(Pulse)
W
W
TJ 150
Tstg -55~150
°C
°C
KSD-T6O023-001
1
Free Datasheet http://www.nDatasheet.co


STA3250D 데이터시트, 핀배열, 회로
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE VCE=-2V, IC=-0.5A*
hFE VCE=-2V, IC=-1.5A*
Collector-emitter saturation voltage
VCE(sat)
IC=-1A, IB=-0.05A*
Base-emitter saturation voltage
VBE(sat)
IC=-1A, IB=-0.05A*
Transition frequency
fT VCE=-2V, IC=-0.05A
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
Switching
Time
Turn-on Time
Storage Time
ton
tstg
Fall Time
*: Pulse test : tP300µs, Duty cycle2%
tf
<
STA3250D
[Ta=25]
Min. Typ. Max. Unit
-50 - - V
- - -0.1 μA
- - -0.1 μA
120 -
240
40 -
-
- - -0.35 V
- - -1.2 V
- 215 - MHz
- 24 - pF
- 100
-
- 300
-
nS
- 50 -
KSD-T6O023-001
2
FreeDatasheethttp://www.nDatasheet.com




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STA3250D transistor

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