E13005-250 반도체 회로 부품 판매점
(MJE13005 Series) Silicon NPN Power Transistor
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 Thinki Semiconductor |
E13005-250
®
Pb Free Plating Product
E13005-250
MJE Power Transistor
Pb
Silicon NPN Power Transistor Product specification MJE13005 series
DESCRIPTION
Silicon NPN, high power transistors in a plastic
envelope, primarily for use in high-speed power
switching circuits.
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter
l Value Unit
Collector-Base Voltage
VCBO 700 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
400 V
9V
5.0 A
2.0 A
75 W
150 oC
-55~150 oC
1. B 2. C 3. E
Unit:mm
Electrical Characteristics ( Ta = 25℃ )
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICBO VCE=700V, IE=0
Emitter Cut-off Current
IEBO VEB=6.0V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
VCEO
hFE
IC=10mA, IB=0
VCE=5V, IC=1.0A
Collector-Emitter Saturation Voltage VCE(sat) IC=4.0A,IB=1.0A
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VBE(sat)
fT
IC=2.0A,IB=0.5A
VCE=10V, IC=0.5A
Turn Off Time
tS IB1=-IB2=0.5A,
Min.
—
Typ. Max. Unit
— 10 uA
— — 10 uA
400 — — V
15 — 30
— — 1.0 V
— — 1.5 V
4 — — MHz
2.0 3.0 4.0 us
© 2006 Thinki Semiconductor Co.,Ltd.
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제조업체: Thinki Semiconductor
( thinki )
E13005-250 transistor
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