파트넘버.co.kr MJE13003 데이터시트 PDF


MJE13003 반도체 회로 부품 판매점

NPN Silicon Plastic-Encapsulate Transistor



MCC 로고
MCC
MJE13003 데이터시트, 핀배열, 회로
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MJE13003
Features
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 1.5Watts of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 700V
Operating and storage junction temperature range: -55OC to +150OC
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=1000uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=1000uAdc, IC=0)
Collector Cutoff Current
(VCB=700Vdc, IE=0)
Collector Cutoff Current
(VCE=400Vdc,IB=0)
Emitter Cutoff Current
(VEB=9.0Vdc, IC=0)
ON CHARACTERISTICS
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
DC Current Gain
(IC=0.5Adc, VCE=2.0Vdc)
DC Current Gain
(IC=0.5mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=1000mAdc, IB=250mAdc)
Base-Emitter Saturation Voltage
(IC=1000mAdc, IB=250mAdc)
Base-Emitter Voltage
(IE=2000mAdc)
SMALL-SIGNAL CHARACTERISTICS
fT Trans istor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz)
tF Fall Time VCC=100V,IC=1.0
tS
Storage Time
A,IB1=IB2=0.2A
400
700
9.0
8.0
5.0
5.0
1000
500
1000
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
40
1.0 Vdc
1.2 Vdc
3.0 Vdc
MHz
0.5 uS
2.5 uS
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
NPN Silicon
Plastic-Encapsulate
Transistor
TO-220
B
F
C
S
Q
A
12 3
H
K
T
U
V
LJ
D
G
R
N
PIN 1.
PIN 2.
BASE
COLLECTOR
PIN 3.
EMITTER
DIMENSIONS
INCHES
MM
DIM MIN MAX
MIN
MAX
NOTE
A .560 .625 14.22 15.88
B
.380 .420
9.65
10.67
C .140 .190 3.56
4.82
D .020 .045 0.51
1.14
F
.139 .161
3.53
4.09
G .190 .110 2.29
H --- .250 ---
J
.012 .025
0.30
2.79
6.35
0.64
K .500 .580 12.70 14.73
L
.045 .060
1.14
1.52
N .190 .210 4.83
5.33
Q .100 .135 2.54
3.43
R .080 .115 2.04
2.92
S
.045 .055
1.14
1.39
T
.230 .270
5.84
6.86
U ----- .050 -----
1.27
V .045 ----- 1.15
-----
Revision: A
www.mccsemi.com
1 of 3
2011/01/01
Free Datasheet http://www.datasheet4u.com/


MJE13003 데이터시트, 핀배열, 회로
MJE13003
Typical Characteristics
MCC
TM
Micro Commercial Components
Revision: A
www.mccsemi.com
2 of 3
2011/01/01
Free Datasheet http://www.datasheet4u.com/




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: MCC

( mcc )

MJE13003 transistor

데이터시트 다운로드
:

[ MJE13003.PDF ]

[ MJE13003 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


MJE13001

Transistors - SI Semiconductors



MJE13001

NPN Epitaxial Silicon Transistor - Unisonic Technologies



MJE13001-Q

NPN SILICON TRANSISTOR - Unisonic Technologies



MJE13001AH

TRANSISTORS - SI Semiconductors



MJE13001AL

NPN Triple Diffused Silicon Transistor - Forward Holdings



MJE13001H

TRANSISTORS - SI Semiconductors



MJE13001L

Transistors - SI Semiconductors



MJE13002

POWER TRANSISTORS(1.5A /300-400V /40W) - Mospec



MJE13002

1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS - Motorola Semiconductors