파트넘버.co.kr HF30-28S 데이터시트 PDF


HF30-28S 반도체 회로 부품 판매점

NPN SILICON RF POWER TRANSISTOR



Advanced Semiconductor 로고
Advanced Semiconductor
HF30-28S 데이터시트, 핀배열, 회로
HF30-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28S is Designed for
FEATURES:
PG = 20 dB min. at 30 W/30 MHz
IMD3 = -30 dBc max. at 30 W(PEP)
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 5.0 A
VCB 65 V
VCE 35 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
60 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.9 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
E
ØC
C
E
B
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10605
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCES
IC = 200 mA
BVCEO
IC = 200 mA
BVEBO
IE = 10 mA
ICES VCE = 30 V
ICBO
VCE = 30 V
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
65 ---
65 ---
35 ---
4.0 ---
--- 10
--- 1.0
5.0 200
UNITS
V
V
V
V
mA
mA
---
COB VCB = 30V
f = 1.0 MHz
---
65 pF
GP VCE = 28 V
PIN = 7.0 W
η C POUT = 30 W(PEP)
f = 175 MHz
7.6
60
--- dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1




PDF 파일 내의 페이지 : 총 1 페이지

제조업체: Advanced Semiconductor

( advanced )

HF30-28S transistor

데이터시트 다운로드
:

[ HF30-28S.PDF ]

[ HF30-28S 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


HF30-28F

NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor



HF30-28S

NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor