BC847B-G 반도체 회로 부품 판매점
(BC84xx-G) Small Signal Transistor
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 Comchip |
Small Signal Transistor
BC846A-G Thru. BC848C-G (NPN)
RoHS Device
Features
-Power dissipation
PCM: 0.20W (@TA=25 OC)
-Collector current
ICM: 0.1A
-Collector-base voltage
VCBO: BC846=80V
BC847=50V
BC848=30V
-Operating and storage junction temperature
range: TJ, TSTG= -65 to +150 OC
Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
3
SOT-23
0.055(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
0.118(3.00)
0.110(2.80)
3
12
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
12
Maximum
Ratings
(at Ta=25
O
C unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
BC846-G
BC847-G
BC848-G
VCBO
Collector-Emitter Voltage
BC846-G
BC847-G
BC848-G
VCEO
Emitter-Base Voltage
VEBO
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
IC
PC
TJ
TSTG
Value
80
50
30
65
45
30
6
0.1
200
150
-65 to +150
UNIT
V
V
V
A
mW
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR31
Comchip Technology CO., LTD.
REV:B
Page 1
Free Datasheet http://www.datasheet4u.com/
Small Signal Transistor
Electrical Characteristics
(BC846A-G Thru. BC848C-G, @TA= 25 °C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Break Voltage
Symbol Test Conditions
BC846-G
BC847-G
BC848-G
BC846-G
BC847-G
BC848-G
VCBO IC =10μA , IE=0
VCEO IC =10mA , IB=0
VEBO IE =10μA , IC=0
MIN
80
50
30
65
45
30
6
TYP
Collector Cut-off Current
BC846-G
BC847-G
BC848-G
Collector Cut-off Current
BC846-G
BC847-G
BC848-G
Emitter cut-off current
DC Current Gain
BC846A,BC847A,BC848A
BC846B,BC847B,BC848B
BC847C,BC848C
Collector-Emitter Saturation Voltage
ICBO
ICEO
IEBO
VCB=70V , IE=0
VCB=50V , IE=0
VCB=30V , IE=0
VCB=60V , IE=0
VCB=45V , IE=0
VCB=30V , IE=0
VEB=5V , IC=0
hFE VCE =5V , IC=2mA
VCE(sat) IC =100mA , IB=5mA
110
200
420
Base-Emitter Saturation Voltage
VBE(sat) IC =100mA , IB=5mA
Transition Frequency
Collector Output Capacitance
fT
VCE=5V , IC=10mA
f=100MHZ
Cob VCB =10V , f=1MHZ
100
MAX UNIT
V
V
V
0.1 µA
0.1 µA
0.1 µA
220
450
800
0.5 V
1.1 V
MHZ
4.5 pF
QW-BTR31
Comchip Technology CO., LTD.
REV:B
Page 2
Free Datasheet http://www.datasheet4u.com/
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( comchip )
BC847B-G transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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