BD159G 반도체 회로 부품 판매점
Plastic Medium-PowerSilicon NPN Transistor
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 ON Semiconductor |
BD159G
Plastic Medium-Power
Silicon NPN Transistor
This device is designed for power output stages for television, radio,
phonograph and other consumer product applications.
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopadt Construction Provides High Power Dissipation Rating
for High Reliability
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VCEO
VCB
VEB
IC
ICM
IB
PD
350 Vdc
375 Vdc
5.0 Vdc
0.5 Adc
1.0 Adc
0.25 Adc
20 W
0.16 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
Symbol
RqJC
Max
6.25
Unit
_C/W
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 20 WATTS
COLLECTOR
2
3
BASE
1
EMITTER
TO−225
CASE 77
STYLE 1
123
MARKING DIAGRAM
YWW
BD159G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 6
1
Y = Year
WW = Work Week
BD159 = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device
BD159G
Package
TO−225
(Pb−Free)
Shipping
500 Units/Box
Publication Order Number:
BD159/D
Free Datasheet http://www.datasheet4u.com/
BD159G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
Collector Cutoff Current (at rated voltage)
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
Symbol
BVCEO
ICBO
IEBO
hFE
Min
350
−
−
30
Max Unit
− Vdc
100 mAdc
100 mAdc
240 −
25 1.0
20
15
10
5.0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power−Temperature Derating Curve
0.8 VBE @ IC/IB = 10
0.6 VBE @ VCE = 10 V
0.4
0.2
0
10
VCE(sat) @ IC/IB = 10
IC/IB = 5.0
TJ = + 25°C
20 30 50
100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltages
500
1.0
0.7
0.5
0.3 TJ = 150°C
0.2
10 ms
500 ms
1.0 ms
dc
0.1
0.07
0.05
0.03
0.02
0.01
10
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
20 30
50
100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Safe Operating Area
300
The Safe Operating Area Curves indicate IC − VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below, the maximum TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
300
200
TJ = 150°C
100
70 + 100°C
50 + 25°C
30
20 - 55°C
VCE = 10 V
VCE = 2.0 V
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Current Gain
200 300
500
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.com/
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BD159G transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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