RN2973CT 반도체 회로 부품 판매점
(RN2972CT / RN2973CT) Transistor Silicon PNP Epitaxial Type
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 Toshiba |
RN2972CT, RN2973CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2972CT, RN2973CT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch Small Mold (6pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN1972CT and RN1973CT
Equivalent Circuit
1.0±0.05
0.15±0.03
Unit: mm
６５４
１２３
0.35±0.02 0.35±0.02
0.7±0.03
0.075±0.03
C
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
−20
−20
−5
−50
50
150
−55 to150
Unit
V
V
V
mA
mW
°C
°C
CST6
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1K1A
Weight: 1.0 mg (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
Note *: Total rating
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-05-21
Free Datasheet http://www.datasheet4u.com/
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
RN2972CT, RN2973CT
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2972CT
RN2973CT
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
Test Condition
VCB = −20 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1mA
IC = −5 mA, IB = −0.25 mA
VCB = −10 V, IE = 0, f = 1 MHz
R1 ⎯
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
300 ⎯ ⎯ ⎯
⎯ ⎯ −0.15 V
⎯ 1.2 ⎯ pF
17.6 22 26.4
kΩ
37.6 47 56.4
2 2010-05-21
Free Datasheet http://www.datasheet4u.com/
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Toshiba
( toshiba )
RN2973CT transistor
데이터시트 다운로드 :
[ RN2973CT.PDF ]
[ RN2973CT 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
