RN2912FS 반도체 회로 부품 판매점
(RN2912FS / RN2913FS) Transistor Silicon PNP Epitaxial Type
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 Toshiba |
RN2912FS,RN2913FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN2912FS, RN2913FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1912FS and RN1913FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
C
R1
B
1.EMIITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2
(E2)
5.BASE2
(B2)
fS6 6.COLLECTOR1 (C1)
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
−20
−20
−5
−50
50
150
−55~150
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/
RN2912FS,RN2913FS
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2912FS
RN2913FS
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
Test Condition
VCB = −20 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = −5 mA, IB = −0.25 mA
VCB = −10 V, IE = 0, f = 1 MHz
R1 ⎯
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
300 ⎯
⎯
⎯ −0.15 V
⎯ 1.2 ⎯ pF
17.6 22 26.4
kΩ
37.6 47 56.4
2 2007-11-01
Free Datasheet http://www.datasheet4u.com/
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Toshiba
( toshiba )
RN2912FS transistor
데이터시트 다운로드 :
[ RN2912FS.PDF ]
[ RN2912FS 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
