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PDF RN2908AFS Data sheet ( Hoja de datos )
| Número de pieza | RN2908AFS | |
| Descripción | (RN2907AFS - RN2909AFS) Transistor Silicon PNP Epitaxial Type | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RN2908AFS (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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RN2907AFS~RN2909AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2907AFS, RN2908AFS, RN2909AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
• Complementary to the RN1907AFS to RN1909AFS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
C
R1
B
E
Type No.
RN2907AFS
RN2908AFS
RN2909AFS
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
1. EMITTER1 (E1)
2. BASE1
(B1)
3. COLLECTOR2 (C2)
4. EMITTER2 (E2)
5. BASE2
(B2)
fS6 6. COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
RN2907AFS to RN2909AFS
RN2907AFS
Emitter-base voltage
RN2908AFS
RN2909AFS
Collector current
Collector power dissipation
RN2907AFS to RN2909AFS
Junction temperature
Storage temperature range
VCBO
−50
VCEO
−50
−6
VEBO
−7
−15
IC −80
PC (Note 1)
50
Tj 150
Tstg −55 to 150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(top view)
654
Q1 Q2
123
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
1 2010-05-14
Free Datasheet http://www.datasheet4u.com/
1 page  
Marking
Type Name
RN2907AFS
RN2908AFS
RN2909AFS
Marking
6 5 4 Type Name
D6
1 23
6 54
Type Name
D7
1 23
6 54
Type Name
D8
1 23
RN2907AFS~RN2909AFS
5 2010-05-14
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RN2908AFS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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