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GN2470 반도체 회로 부품 판매점

INSULATED GATE BIPOLAR TRANSISTOR



Supertex 로고
Supertex
GN2470 데이터시트, 핀배열, 회로
Insulated Gate
Bipolar Transistor
GN2470
IGBT
Features
Low voltage drop at high currents
Industry standard TO-252 (D-Pak) package
700V breakdown voltage rating
Applications
White goods
Small appliances
Lighting controls
Motor drives
Meter readers
Small off-line power supplies
General Description
The Supertex GN2470 is a 700V, 3.5amp insulated gate
bipolar transistor (IGBT) that combines the positive aspects
of both BJTs and MOSFETs.
The GN2470 IGBT has lower on-state voltage drop with high
blocking voltage capabilities and features many desirable
properties including a MOS input gate, low conduction voltage
drop at high currents.
Ordering Information
Device
Package Option
TO-252 (D-PAK)
GN2470
GN2470K4-G
-G indicates that the package is RoHS certified (“Green”)
Pin Configuration
COLLECTOR
EMITTER
GATE
TO-252 (D-PAK) (K4)
Absolute Maximum Ratings
Parameter
Value
Collector-to-emitter voltage
700V
Gate-to-emitter voltage
±20V
Operating junction and storage
temperature range
-55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configuration
YYWW
GN2470
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
TO-252 (D-PAK) (K4)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Free Datasheet http://www.datasheet4u.com/


GN2470 데이터시트, 핀배열, 회로
GN2470 IGBT
Thermal Characteristics
Package
IC
(continuous)
IC
(pulsed)
TO-252
1.0A
3.5A
Notes:
† Mounted on FR4 board, 25mm x 25mm x 1.57mm
Power Dissipation
@TA = 25OC
2.5W
θjc
(OC/W)
10
θja
(OC/W)
60
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units
BVCES Collector-to-emitter breakdown voltage
700 -
-
V
BVECS Emitter-to-collector breakdown voltage
-6.0 -10
-
V
VGE(th) Gate threshold voltage
1.5 - 3.5
V
VCE Collector-to-emitter voltage drop
- 4.5 5.0
V
gfe Forward transconductance
0.5 0.8 - mho
ICES Zero gate voltage collector current
- - 100 µA
IGES Gate-to-emitter leakage current
- - ±100 nA
IC(ON) On-state collector current
3.0 4.0
-
A
td(ON) Turn-on delay time
- 8.0 15
tr
td(OFF)
Rise time
Turn-off delay time
- 400 600
- 20 50
ns
tf Fall time
- 7000 12000
CISS Input capacitance
- 100 150
COSS Output capacitance
- 12 25 pF
CRSS Reverse transfer capacitance
-25
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
VCE = VGE, IC = 1.0mA
IC = 3.0A, VGE = 13V
VCE = 25V, IC = 2.0A
VGE = 0V, VCE = 600V
VGE = ±20V, VCE = 0V
VGE = 10V, VCE = 25V
VCC = 25V
RGEN = 25Ω
RL = 11Ω
VCE = 25V
VGE = 0V
f = 1MHz
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
2
Free Datasheet http://www.datasheet4u.com/




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GN2470 transistor

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GN2470

INSULATED GATE BIPOLAR TRANSISTOR - Supertex