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STP15L01F 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



SamHop 로고
SamHop
STP15L01F 데이터시트, 핀배열, 회로
r
Pr
STP15L01/F
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V
110 @ VGS=10V
15A
121 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
STP SERIES
TO-220
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
a
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
TO-220 TO-220F
100
±20 ±20
15 15 e
12.6
12.6 e
45 45 e
25
58 25
40 17.5
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
2.6 6
62.5 62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Nov,01,2010
www.samhop.com.tw
Free Datasheet http://www.datasheet4u.com/


STP15L01F 데이터시트, 핀배열, 회로
STP15L01/F
Ver1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=7A
VGS=4.5V , ID=6A
VDS=20V , ID=7A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=7A,VGS=10V
VDS=50V,ID=7A,VGS=4.5V
VDS=50V,ID=7A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure12)
e.Drain current limited by maximum junction temperatrue.
Typ
1.7
110
121
15
675
48
32
16
14.5
31
6.4
12.4
6.4
1.7
3.5
0.8
Max Units
1
±100
V
uA
nA
3V
138 m-ohm
163 m-ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.3 V
Nov,01,2010
2 www.samhop.com.tw
Free Datasheet http://www.datasheet4u.com/




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STP15L01F transistor

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