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PDF 2SD1033 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1033 | |
| Descripción | Silicon NPN Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon NPN Epitaxial Transistor
2SD1033
Features
High Voltage VCEO=150V
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Peak collector current *1
ICP
Collector current
IC
Collector power dissipation Ta = 25 *2
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW 10ms,Duty Cycle 50%
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm
Rating
200
150
5
3
2
2
150
-55 to +150
Unit
V
V
V
A
A
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC Current Gain *
Collector saturation voltage *
Gain saturation Voltage
* PW 350ìs,Duty cycle 2%
Symbol
ICBO
IEBO
hFE
VCE(sat)
fT
Testconditons
VCB = 150V, IE = 0
VEB = 4V, IC = 0
VCE=10V,IC=0.4A
IC = 500mA, IB = 0.4A
VCE=10V,IE=0.4A
Min Typ Max Unit
50 ìA
50 ìA
40 100 200
0.2 1.0 V
10 MHZ
hFE Classification
Marking
hFE
M
40 to 80
L
60 to 120
K
100 to 200
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