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Kexin |
SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SD1007
Features
High collector to emitter voltage: VCEO 120V.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Junction temperature
Storage temperature
*. PW 10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Base-emitter voltage *
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transition frequency
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
HR
90 180
HQ
135 270
Symbol
VCBO
VCEO
VEBO
IC
IC (pu)
Pc
Tj
Tstg
Rating
120
120
5
0.7
1.2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
VBE VCE =10V , IC = 10mA
ICBO VCB = 120V, IE=0
IEBO VEB = 5V, IC=0
VCE =1V , IC = 5.0mA
hFE
VCE =1V , IC = 100mA
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
fT VCE = 10V , IE = -10mA
Min Typ Max Unit
550 620 650 mV
100 nA
100 nA
45 200
90 200 400
0.3 0.6 V
0.9 1.5 V
10 pF
90 MHz
HP
200 400
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Free Datasheet http://www.datasheet4u.com/
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