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PDF 2SD1006 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1006 | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SD1006
Features
High collector to emitter voltage: VCEO 100V.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector l power dissipation
Junction temperature
Storage temperature
*. PW 10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Base-emitter voltage *
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transition product
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
HM
90 180
HL
135 270
Symbol
VCBO
VCEO
VEBO
IC
IC(pu)
Pc
Tj
Tstg
Rating
100
100
5
0.7
1.2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
VBE VCE =10V , IC = 10mA
ICBO VCB = 100V, IE=0
IEBO VEB = 5V, IC=0
VCE =1V , IC = 5.0mA
hFE
VCE =1V , IC = 100mA
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
fT VCE = 10V , IE = -10mA
Min Typ Max Unit
550 620 650 mV
100 nA
100 nA
45 200
90 200 400
0.3 0.6 V
0.9 1.5 V
10 pF
90 MHz
HK
200 400
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD1006.PDF ] | |
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