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MCC |
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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2SC4097-P
2SC4097-Q
2SC4097-R
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• High Icmax. Icmax=0.5A
• Low VCE(SAT). Optimal for low voltage operation.
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ, TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction and Storage Temperature
Rating
32
40
5
500
200
-55 to +150
Unit
V
V
V
mA
mW
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
V(BR)CBO
Collector -base breakdown voltage
(IC=100µA, IE= 0)
40
V
V(BR)CEO
Collector-emitter breakdown voltage
(IC=-1mA, IB= 0)
32
V
V(BR)EBO
Emitter-base breakdown voltage
(IE=100µA, Ic= 0)
5
V
ICBO
Collector cut-off current
(VCB=20V,IE=0)
1 µA
IEBO
Emitter cut-off current
(VEB=4V, Ic= 0)
1 µA
hFE
DC Current Gain
(VCE=3V,IC=10mA)
82
390
VCE(sat)
Collector-emitter saturation voltage
(IC=100mA, IB=10mA)
0.4 V
Cob
Collector Output Capacitance
(VCB=10V, IE=0, f=1.0MHz)
6 pF
fT
Transition frequency
(VCE=5V, Ic=20mA,f=100MHz)
250 MHz
NPN Silicon
Epitaxial Transistors
SOT-323
A
D
C
BC
FE
BE
G HJ
K
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30 .40
.000
.100
.90 1.00
.100
.250
.30 .40
Suggested Solder
Pad Layout
0.70
NOTE
hFE CLASSIFICATION
Rank
Ramge
Marking
P
82~180
CP
Q
120~270
CQ
R
180~390
CR
0.90
1.90 mm
0.65
0.65
Revision: A
www.mccsemi.com
1 of 3
2011/01/01Free Datasheet http://www.datasheet4u.com/
2SC4097-P/Q/R
MCC
TM
Micro Commercial Components
zElectrical characteristic curves
1000
500 VCE=6V
200
100
Ta=100°C
50
20 80°C
25°C
10
5
−25°C
−55°C
2
1
0.5
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100
Ta=25°C
0.50mA
50
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0 IB=0A
012345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
500
Ta=25°C
400
2mA
1.8mA
1.6mA
1.4mA
300 1.2mA
1.0mA
0.8mA
200 0.6mA
0.4mA
100
0.2mA
0 IB=0A
012345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics( ΙΙ )
1
Ta=25°C
lC/lB=10
0.5
0.2
0.1
0.05
0.02
0.5 1 2
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000
500
Ta=100°C
200 75°C
50°C
100 25°C
0°C
50 −25°C
−50°C
20
VCE=3V
10
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current
500
Ta=25°C
VCE=5V
200
100
50
−0.5 −1 −2
−5 −10 −20
EMITTER CURRENT : IE (mA)
−50
Fig. 6 Gain bandwidth product vs.
emitter current
50
Cib
20
Ta=25°C
f=1MHz
IE=0A
IC=0A
10 Cob
5
2
0.5 1
2
5 10 20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Revision: A
www.mccsemi.com
2 of 3
Free Datasheet http://www.datasheet4u.com/
2011/01/01
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