|
ROHM Semiconductor |
Transistors
2SC4061K / 2SC3415S / 2SC4015
Chroma amplifier transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015
zFeatures
1) High breakdown voltage. (BVCEO=300V)
2) Low collector output capacitance.
(Typ. 3pF at VCB=30V)
3) Ideal for chroma circuit.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
300
Collector-emitter voltage
VCEO
300
Emitter-base voltage
VEBO
5
Collector current
IC 100
Collector power
dissipation
2SC4061K
2SC3415S
2SC4015
PC
0.2
0.3
1∗
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
mA
W
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SC4061K 2SC3415S
SMT3
SPT
NP NP
AN∗
T146
−
TP
3000
5000
2SC4015
ATV
NP
−
TV2
2500
zExternal dimensions (Unit : mm)
2SC4061K
ROHM : SMT3
EIAJ : SC-59
0.3Min.
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
2SC3415S
42
ROHM : SPT
EIAJ : SC-72
0.45
2.5 0.5 0.45
5
(1) Emitter
(2) Collector
(3) Base
(1) (2) (3)
Taping specifications
2SC4015
6.8 2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
(1) Emitter
(2) Collector
(3) Base
Taping specifications
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
300 − − V IC=50µA
300 − − V IC=100µA
5 − − V IE=50µA
− − 0.5 µA VCB=200V
− − 0.5 µA VEB=4V
− − 2 V IC/IB=50mA/5mA
56 − 180 − VCE/IC=10V/10mA
50 100
− MHz VCE=30V, IE=−10mA, f=30MHz
− 3 − pF VCB=30V, IE=0A, f=1MHz
Rev.A
1/3
Free Datasheet http://www.datasheet4u.com/
Transistors
zElectrical characteristics curves
100
2.0mA
1.8mA
80 1.6mA
1.4mA
1.2mA
60
40
Ta=25°C
1.0mA
0.8mA
0.6mA
0.4mA
20
IB=0.2mA
0
0 2 4 6 8 10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output
characteristics ( Ι )
2SC4061K / 2SC3415S / 2SC4015
100 Ta=25°C
80 1.4mA
1.2mA
2.0mA
1.8mA
1.6mA
60
40
1.0mA
0.8mA
0.6mA
0.4mA
20
IB=0.2mA
0
04
8 12 16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter output
characteristics ( ΙΙ )
200 VCE=10V
100
50
20
10
5
2
1
0.5
200 400 600 800 1000 1200 1400 1600
BASE TO EMITTER VOLTAGE : VBE (mV)
Fig.3 Ground emitter propagation
characteristics
500 Ta=25°C
200
VCE=10V
100
50 5V
20
10
5
0.2 0.5 1 2
5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain
vs. collector current ( Ι )
500
VCE=10V
200 Ta=100°C
100
25°C
50 −25°C
20
10
5
2
0.2 0.5 1 2
5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain
vs. collector current ( ΙΙ )
2 Ta=25°C
1
0.5
0.2 IC/IB=10
0.1 5
0.05
0.02
0.2
0.5 1 2
5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
2
1 Ta=−25°C 25°C
0.5 100°C
0.2
Ta=100°C
0.1
25°C
−25°C
0.05
IC/IB=10
VBE(sat)
VCE(sat)
0.02
0.2
0.5 1 2
5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
200 Ta=25°C
100
50
VCE=30
10V
20
10
5
−1 −2
−5 −10 −20 −50 −100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product
vs. emitter current
20 Ta=25°C
f=1MHz
10 IE=0A
5
2
1
0.5
1
2
5 10 20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
Rev.A
2/3
Free Datasheet http://www.datasheet4u.com/
|