PDF KTD1898 Data sheet ( Hoja de datos )

Número de pieza	KTD1898
Descripción	NPN Plastic Encapsulated Transistor
Fabricantes	SeCoS
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No Preview Available ! Elektronische Bauelemente KTD1898 1A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package General Purpose Application CLASSIFICATION OF hFE(1) Product-Rank KTD1898-O Range 70~140 Marking ZO KTD1898-Y 120~240 ZY KTD1898-GR 200~400 ZG PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch Collector 2 1 Base 3 Emitter SOT-89 4 A 1 B 2 C 3 E EC BD FG H J K L REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector-Base Voltage VCBO 100 Collector-Emitter Voltage VCEO 80 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 1 Collector Power Dissipation PC 500 Maximum Junction to Ambient RθJA 250 Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V(BR)CBO 100 - - V IC=0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)EBO ICBO IEBO 5 - - - - - V IE=0.1mA, IC=0 - 0.1 µA VCB=80V, IE=0 - 0.1 µA VEB=4V, IC=0 DC Current Gain hFE 70 - 400 VCE=3V, IC= 500mA Collector-Emitter Saturation voltage VCE(sat) - - 0.4 V IC=500mA, IB=20mA Transition Frequency fT - 100 - MHz VCE=10V,IC=50mA,f=100MHz Collector Output Capacitance COB - 20 - pF VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ 10-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 1 Free Datasheet http://www.datasheet4u.com/ 1 page

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