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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PD1820A
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 22
1999 Apr 12
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD1820A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification, especially
for portable equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
TYPE NUMBER
2PD1820AQ
2PD1820AR
2PD1820AS
MARKING CODE(1)
A∗Q
A∗R
A∗S
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
1
Top view
3
1
2
MAM336
3
2
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
− 60 V
− 50 V
−5V
− 500 mA
−1A
− 200 mA
− 200 mW
−65 +150 °C
− 150 °C
−65 +150 °C
1999 Apr 12
2
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