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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D187
2PB1219A
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 25
1999 Apr 12
Philips Semiconductors
PNP general purpose transistor
Product specification
2PB1219A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
MARKING
TYPE NUMBER
2PB1219AQ
2PB1219AR
2PB1219AS
MARKING CODE(1)
D∗Q
D∗R
D∗S
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
1
Top view
3
1
2
MAM048
3
2
Fig.1 Simplified outline (SOT323; SC70)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT323; SC70 standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−50
−5
−500
−1
−200
200
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 12
2
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