MJE13005 반도체 회로 부품 판매점
SILICON POWER TRANSISTOR
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 Comset Semiconductors |
SEMICONDUCTORS
MJE13005
SILICON POWER TRANSISTORS
NPN power transistors in a TO-220 package. They are intended for high voltage, high speed
power switching inductive circuits where fall time is critical. They are particularly suited for
115V and 220V SWITCHMODE applications such as switching regulator’s, inverters, motor
controls, solenoid/relay drivers and deflection circuits
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
IE
IEM
PT
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (*)
Base Current
Base Peak Current (*)
Emitter Current
Emitter Peak Current (*)
http://www.DataSheet4U.net/
Power Dissipation at Case Temperature
Power Dissipation at free Air Temperature
tJ Junction Temperature
ts Storage Temperature range
(*)Pulse Width = 5ms, duty cycle <10%.
Value
@ Tmb < 25°
400
700
9
4
8
2
4
6
12
75
2
150
-65 to +150
Unit
V
V
V
A
A
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.67
62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
MJE13005
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO
Collector-Emitter
Sustaining Voltage (*)
IC= 10 mA, IB= 0
ICBO
IEBO
VCE(SAT)
Collector- Cutoff Current
VCB = 700 V
IB= 0
TC= 25°C
TC= 100°C
Emitter Cutoff Current VEB= 9 V, IC= 0
IC= 1 A, IB= 200 mA
Collector-Emitter
IC= 2 A
TC= 25°C
saturation Voltage (*) IB= 500 mA
TC= 100°C
IC= 4 A, IB= 1 A
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
IC= 1 A, IB= 200 mA
IC= 2 A
TC= 25°C
IB= 500 mA
TC= 100°C
hFE
fT
COB
Forward Current transfer VCE= 5.0 V, IC= 1 A
ratio (*)
VCE= 5.0 V, IC= 2 A
Transition Frequency
V = 10 V, I = 0.5 A, f= 1 MHzCE
http://www.DataSheet4U.net/
C
Output Capacitance
IE= 0 ; VCB= 10 V ; f= 1 MHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Min
400
-
-
-
-
-
-
-
-
-
-
10
8
4
-
Typ Max Unit
- -V
-
-
1
5
mA
- 1 mA
- 0.5
-
-
0.6
1
V
-1
- 1.2
- 1.6 V
- 1.5
-
-
60
40
-
- - MHz
65 - pF
SWITCHING TIMES.
Symbol
Ratings
td Delay Time
tr Rise time
ts Storage Time
tf Fall Time
.
Test Condition(s)
VCC= 125 V; IC= 2 A
IB1= -IB2= 400 mA
tp = 25 µs, duty cycle <1%.
Min Typ Max Unit
- - 0.1
-
-
-
-
0.7
4
µs
- - 0.9
02/10/2012
COMSET SEMICONDUCTORS
2/3
datasheet pdf - http://www.DataSheet4U.net/
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Comset Semiconductors
( comsets )
MJE13005 transistor
데이터시트 다운로드 :
[ MJE13005.PDF ]
[ MJE13005 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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