파트넘버.co.kr BDY55 데이터시트 PDF


BDY55 반도체 회로 부품 판매점

(BDY55 / BDY56) NPN SILICON TRANSISTORS



Comset Semiconductors 로고
Comset Semiconductors
BDY55 데이터시트, 핀배열, 회로
BDY55 – BDY56
NPN SILICON TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PTOT
TJ
TS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
www.DataSheet.net/
@ TC = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
BDY55
BDY56
BDY55
BDY56
60
120
100
150
7
15
7
117
200
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.5
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


BDY55 데이터시트, 핀배열, 회로
BDY55 – BDY56
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
ICEO
IEBO
ICEX
VCE(SAT)
VCE(SAT)
VBE
HFE
fT
td + tr
ts + tf
Collector-Emitter Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
IC = 200 mA
IB = 0
VCE = 30 V
VCE = 60 V
Emitter-Base Cutoff Current VEB = 7 V
Collector-Emitter Cutoff
Current
Collector-Emitter saturation
Voltage (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Static Forward Current
transfer ratio (*)
Transition Frequency
Turn-on time
Turn-off time
VCE = 100 V
VBE = -1.5 V
VCE = 100 V
VBE = -1.5 V
TCASE = 150°C
VCE = 150 V
VBE = -1.5 V
VCE = 150 V
VBE = -1.5 V
TCASE = 150°Cwww.DataSheet.net/
IC = 4.0 A
IB = 0.4 A
IC = 10 A
IB = 3.3 A
IC = 10 A
IB = 3.3 A
IC = 4.0 A
VCE = 4.0 V
VCE = 4 V
IC = 4 A
VCE = 4 V
IC =10 A
VCE = 4.0 V
IC = 1.0 A,
f = 10 MHz
IC = 5 A
IB = 1 A
IC = 5 A
IB1 = 1 A
IB2 = -0.5 A
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
(*) Pulse Width 300 µs, Duty Cycle 2.0%
Min Typ Max Unit
60 -
120 -
-
-
V
-
-
-
-
0.7
0.5
mA
-
-
-
-
5
3
mA
- -5
- - 30
mA
- -3
- - 30
- - 1.1
V
- - 2.5
- - 2.5
- - 1.8 V
20 - 70
V
10
10 -
- MHz
- - 0.5 µs
- - 2 µs
23/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/




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제조업체: Comset Semiconductors

( comsets )

BDY55 transistor

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:

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