파트넘버.co.kr BDY28C 데이터시트 PDF


BDY28C 반도체 회로 부품 판매점

HIGH CURRENT NPN SILICON TRANSISTOR



Seme LAB 로고
Seme LAB
BDY28C 데이터시트, 핀배열, 회로
BDY28C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
NPN SILICON TRANSISTOR
FEATURES
12
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO204AA)
HIGH SWITCHING CURRENTS
HIGH RELIABILITY
CECC SCREENING OPTIONS
SPACE QUALITY LEVEL OPTIONS
JAN LEVEL SCREENING OPTIONS
APPLICATIONS
SWITCHING REGULATORS
LINEAR APPLICATIONS
Pin 1 = Base
Pin 2 = Emitter
Case = Collector
www.DataSheet.net/
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°C unless otherwise stated
VCBO
Collector - Base Voltage
VCEO
Collector - Emitter Voltage
VEBO
IC
Emitter – Base Voltage
Continuous Collector Current
IB Base Current
Ptot Total Power Dissipation at Tcase = 25°C
Derate above 25°C
TJ Junction Temperature
Tstg Storage Temperature
500V
250V
10V
6A
3A
50W
0.29W/°C
200°C
-65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
DOC 6011, ISSUE 2
Datasheet pdf - http://www.DataSheet4U.co.kr/


BDY28C 데이터시트, 핀배열, 회로
BDY28C
THERMAL CHARACTERISTICS
Rth j-case Thermal resistance to case
Max
3.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ICEO Collector Cut-Off Current
VCE = 250V
IB = 0
ICES Collector Cut-Off Current
VCE = 400V
VBE = 0
IEBO Emitter Cut-Off Current
VEB = 10V
IC = 0
V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 50mA
IB = 0
220
V(BR)CBO* Collector-Base Breakdown Voltage
IC = 3mA
500
VCE(sat)* Collector-Emitter Saturation Voltage IC = 2.0A
IB = 0.25A
VBE(sat)* Base-Emitter Saturation Voltage
IC = 2.0A
IB = 0.25A
hFE* Forward-current transfer ratio
IC = 1.0A
IC = 2.0A
VCE = 4.0V
VCE = 4.0V
75
Typ.
90
82
Max.
1.0
1.0
1.0
0.6
1.2
180
Unit
mA
V
DYNAMIC CHARACTERISTICS
Cobo Output Capacitance
FT Transition Frequency
Ton Turn-on time
Toff Turn-off time
* Pulse test tp = 300µs, δ < 2%
IE = 0
www.DataSheet.net/
f = 1.0MHz
VCB = 10V
65 120 pF
IC = 0.5A
f = 10.0MHz
VCE = 15V
10
MHz
IC= 5.0A
IC= 5.0A
IB1= 1.0A
IB1=-IB2= 1.0A
1.0
µs
6.0
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
DOC 6011, ISSUE 2
Datasheet pdf - http://www.DataSheet4U.co.kr/




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