BDY25A 반도체 회로 부품 판매점
HIGH CURRENT NPN SILICON TRANSISTOR
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 Seme LAB |
BDY25A
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
12
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
NPN SILICON TRANSISTOR
FEATURES
• HIGH CURRENT FAST SWITCHING
• HIGH RELIABILITY
• SCREENING OPTIONS AVAILABLE
Pin 1 = Base
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO204AA)
APPLICATIONS
• SWITCHING CIRCUITS
• LARGE SIGNAL/POWER AMPLIFIERS
Pin 2 = Emitter
Case = Collector
www.DataSheet.net/
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°C unless otherwise stated
VCBO
Collector - Base Voltage
VCEO
Collector - Emitter Voltage
VEBO
IC
Emitter – Base Voltage
Continuous Collector Current
IB Base Current
Ptot Total Power Dissipation at Tcase = 25°C
Derate above 25°C
TJ Junction Temperature
Tstg Storage Temperature
200V
140V
10V
6A
3A
50W
0.29 W/°C
200°C
-65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
DOC 7595, ISSUE 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDY25A
THERMAL CHARACTERISTICS
Rth j-case Thermal resistance to case
Max
3.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ICEO Collector Cut-Off Current
VCE = 140V
IB = 0
ICES Collector Cut-Off Current
VCE = 180V
VBE = 0
IEBO Emitter Cut-Off Current
VEB = 10V
IC = 0
V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 50mA
IB = 0
140
V(BR)CBO* Collector-Base Breakdown Voltage
IC = 3mA
200
VCE(sat)* Collector-Emitter Saturation Voltage IC = 2.0A
IB = 0.25A
VBE(sat)* Base-Emitter Saturation Voltage
IC = 2.0A
IB = 0.25A
hFE* Forward-current transfer ratio
IC = 1.0A
IC = 2.0A
VCE = 4.0V
VCE = 4.0V
15
Typ.
55
20
Max.
1.0
1.0
1.0
0.6
1.2
45
Unit
mA
V
DYNAMIC CHARACTERISTICS
Cobo Output Capacitance
FT Transition Frequency
Ton Turn-on time
Toff Turn-off time
* Pulse test tp = 300µs, δ < 2%
IE = 0
www.DataSheet.net/
f = 1.0MHz
IC = 0.5A
f = 10.0MHz
IC= 5.0A
IC= 5.0A
VCB = 10V
VCE = 15V
IB1= 1.0A
IB1=-IB2= 1.0A
65 120 pF
10 MHz
0.3 0.5
1.5 2.0
µs
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
DOC 7595, ISSUE 1
Datasheet pdf - http://www.DataSheet4U.co.kr/
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( semelab )
BDY25A transistor
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[ BDY25A.PDF ]
[ BDY25A 다른 제조사 검색 ]
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