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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY24
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
·High Switching Speed
APPLICATIONS
·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
100 V
90
www.DataSheet.net/
V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
6A
IBB Base Current
3A
PC Collector Power Dissipation@TC=25℃ 87.5
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 ℃/W
isc Website:www.iscsemi.cn
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDY24
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
90
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.25A
ICES Collector Cutoff Current
VCE= 100V; VBE= 0
0.6 V
1.2 V
1.0 mA
ICEO Collector Cutoff Current
VCE= 90V; IB=B 0
1.0 mA
IEBO Emitter Cutoff Current
VEB= 10V; IC= 0
1.0 mA
hFE DC Current Gain
IC= 2A; VCE= 4V
15 100
fT Current Gain-Bandwidth Product
Switching Times
IC= 0.5A; VCE= 15V; f=10MHz
www.DataSheet.net/
10
MHz
ton Turn-On Time
toff Turn-Off Time
IC= 5A; IB=B 1A
IC= 5A; IB1= 1A; IB2= -0.5A
0.5 μs
2.0 μs
hFE Classifications
ABC
15-45 30-90 75-100
isc Website:www.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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