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Comset Semiconductors |
BDX67 – A – B – C
NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
www.DataSheet.net/
IC Collector Current
IC(RMS)
ICM
IB Base Current
PT Power Dissipation
@ TC = 25°
TJ Junction Temperature
TS Storage Temperature
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
Value
60
80
100
120
80
100
120
140
5.0
Unit
V
V
V
16
A
20
0.25 A
150 Watts W/°C
-55 to +200
°C
05/10/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX67 – A – B – C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
BDX67
BDX67A
BDX67B
BDX67C
Value
1.17
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
ICEO Collector Cutoff Current
IEBO Emitter Cutoff Current
ICBO
Collector-Base Cutoff
Current
Test Condition(s)
Min Typ Max Unit
IC=0.1 A,
L=25mH
www.DataSheet.net/
VCE=30 V
VCE=40 V
VCE=50 V
VCE=60 V
VBE=5 V
TCASE=25°C
VCB=60 V
TCASE=200°C
VCB=40 V
TCASE=25°C
VCB=80 V
TCASE=200°C
VCB=50 V
BDX67
60 -
-
BDX67A 80 -
-
V
BDX67B 100 -
-
BDX67C 120 -
-
BDX67
--
BDX67A -
-
3 mA
BDX67B -
-
BDX67C -
-
BDX67
BDX67A
BDX67B
BDX67C
-
- 5.0 mA
- -1
BDX67
- -5
mA
- -1
BDX67A
- -5
05/10/2012
COMSET SEMICONDUCTORS
2/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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