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Comset Semiconductors |
BDX64 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCEV
VEBO
IC
IB
PT
TJ
TS
Collector-Emitter Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
www.DataSheet.net/
VBE=-1.5 V
IC(RMS)
ICM
@ TC = 25°
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
Value
-60
-80
-100
-120
-60
-80
-100
-120
-5.0
-12
-16
0.2
117
-55 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX64 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VCEO(SUS)
ICEO
Collector-Emitter Breakdown
Voltage (*)
Collector Cutoff Current
IC=-0.1 A
IB=0
L=25mH
VCE=-30 V
VCE=-40 V
VCE=-50 V
VCE=-60 V
IEBO Emitter Cutoff Current
VBE=-5 V
ICBO
VCE(SAT)
Collector-Base Cutoff Current
VCBO=-60 V
VCBO=-40 V
TCASE=200°Cwww.DataSheet.net/
VCBO=-80 V
VCBO=-50 V
TCASE=200°C
VCBO=-100 V
VCBO=-60 V
TCASE=200°C
VCBO=-120 V
VCBO=-70 V
TCASE=200°
Collector-Emitter saturation
Voltage (*)
IC=-5.0 A
IB=-20 mA
VF
Forward Voltage (pulse
method)
IF=5 A
VBE
Base-Emitter Voltage (*)
IC=-5.0 A
VCE=-3V
BDX64 -60 -
-
BDX64A -80
BDX64B -100
-
-
-
-
V
BDX64C -120 -
-
BDX64
--
BDX64A
BDX64B
-
-
-
-
-1.0 mA
BDX64C -
-
BDX64
BDX64A
BDX64B
-
- -5.0 mA
BDX64C
BDX64
- - 0.2
- -2
BDX64A
BDX64B
-
-
-
-
- 0.2
-2
-
- 0.2
-2
- - 0.2
BDX64C
- -2
BDX64
BDX64A
BDX64B
-
- -2 V
BDX64C
BDX64
BDX64A
BDX64B
-
1.8
-
V
BDX64C
BDX64
BDX64A
BDX64B
-
- -2.5 V
BDX64C
24/10/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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