BDX64A 반도체 회로 부품 판매점
Silicon PNP Darlington Power Transistor
|
|
 Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX64/A/B/C
DESCRIPTION
·Collector Current -IC= -12A
·High DC Current Gain-hFE= 1000(Min)@ IC= -5A
·Complement to Type BDX65/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX64
-80
VCBO
Collector-Base
Voltage
BDX64A
BDX64B
-100
-120
V
BDX64C
-140
BDX64
-60
VCEO
Collector-Emitter
Voltage
BDX64A
BDX64B
-80
-100
V
www.DataSheet.net/
BDX64C
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
ICM Collector Current-Peak
-16 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.2
117
200
-65~200
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.5 ℃/W
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX64
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX64A
BDX64B
IC= -100mA ;IB=0
BDX64C
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
VBE(on) Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
ICEO Collector Cutoff Current
IC= -5A ; VCE= -3V
IF= -5A
VCE= 1/2VCEOmax; IB= 0
ICBO
ICBO
Collector Cutoff Current
BDX64
Collector Cutoff Current
BDX64A
BDX64B
BDX64C
VCB= VCBOmax;IE= 0
VCB= -40V;IE= 0;TJ= 200℃
V = -50V;I = 0;T = 200℃CB
www.DataSheet.net/
E
J
VCB= -60V;IE= 0;TJ= 200℃
VCB= -70V;IE= 0;TJ= 200℃
IEBO Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -3V
hFE-2
DC Current Gain
IC= -5A ; VCE= -3V
hFE-3
DC Current Gain
IC= -12A ; VCE= -3V
COB Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest= 1MHz
ton Turn-on Time
toff Turn-off Time
IC= -5A; IB1= -IB2= -20mA
MIN TYP. MAX UNIT
-60
-80
-100
V
-120
-2 V
-2.5 V
-1.8 V
-0.2 mA
-0.4 mA
-3 mA
-5
1500
1000
750
200
mA
pF
1 μs
2.5 μs
isc Website：www.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
|
PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Inchange Semiconductor
( isc )
BDX64A transistor
데이터시트 다운로드 :
[ BDX64A.PDF ]
[ BDX64A 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BDX64
PNP SILICON DARLINGTONS - ETC
BDX64
Silicon PNP Darlington Power Transistor - Inchange Semiconductor
BDX64
Silicon PNP Darlington Power Transistor - Comset Semiconductors
BDX64A
PNP SILICON DARLINGTONS - ETC
BDX64A
Silicon PNP Darlington Power Transistor - Inchange Semiconductor
BDX64A
Silicon PNP Darlington Power Transistor - Comset Semiconductors
BDX64B
PNP SILICON DARLINGTONS - ETC
BDX64B
Silicon PNP Darlington Power Transistor - Inchange Semiconductor
BDX64B
Silicon PNP Darlington Power Transistor - Comset Semiconductors