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Savantic |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX33/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX34/A/B/C
APPLICATIONS
·For power linear and switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX33
VCBO
Collector-base voltage
BDX33A
BDX33B
BDX33C
BDX33
VCEO
BDX33A
Collector-emitter voltage
BDX33B
BDX33C
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
www.DataSheet.net/
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
45
60
80
100
45
60
80
100
5
10
15
0.25
70
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.78
UNIT
/W
Datasheet pdf - http://www.DataSheet4U.co.kr/
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX33
VCEO(SUS)
Collector-emitter
sustaining voltage
BDX33A
BDX33B
IC=0.1A, IB=0
BDX33C
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VF
Collector-emitter
saturation voltage
BDX33/33A IC=4A ,IB=8mA
BDX33B/33C IC=3A ,IB=6mA
Base-emitter
on voltage
BDX33/33A
IC=4A ; VCE=3V
BDX33B/33C IC=3A ; VCE=3V
BDX33
VCB=45V, IE=0
Collector
cut-off current
BDX33A
BDX33B
BDX33C
VCB=60V, IE=0
VCB=80V, IE=0
www.DataSheet.net/
VCB=100V, IE=0
BDX33
VCE=22V, IB=0
Collector
cut-off current
BDX33A
BDX33B
VCE=30V, IB=0
VCE=40V, IB=0
BDX33C
VCE=50V, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
BDX33/33A
IC=4A ; VCE=3V
BDX33B/33C IC=3A ; VCE=3V
Forward diode voltage
IF=8A
Product Specification
BDX33/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
2.5 V
2.5 V
0.2 mA
0.5 mA
5 mA
750
4.0 V
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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