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Comset Semiconductors |
BDV66-A-B-C
PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN.
Theyare designed for audio output stages and general amplifier and switching applications.
complementary is BDV67-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICM Collector Peak Current
IB Base Current
BDV66
BDV66A
BDV66B
BDV66C
BDV66
www.DataSheet.net/
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
-80
-100
-120
-140
-80
-100
-120
-140
-5.0
-16
-20
-0.5
Unit
V
V
V
A
A
26/09/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV66-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
PT Power Dissipation Tmb = 25° C
TJ Junction Temperature
TS Storage Temperature
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
Value
175
150
-65 to +150
Unit
Watts
°C
THERMAL CHARACTERISTICS
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Symbol
Ratings
Rthj-c
Thermal Resistance, Junction to Case
Value
0.625
Unit
°C / W
SWITCHING TIMES
Symbol
Ratings
Test Condition(s)
ton turn-on time
toff turn-off time
IC= 10 A , VCC= 12 V
IB1 = -IB2 = 40 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
Value
Min Typ Max
-1-
- 3.5 -
Unit
µs
26/09/2012
COMSET SEMICONDUCTORS
2/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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