파트넘버.co.kr BDV66 데이터시트 PDF


BDV66 반도체 회로 부품 판매점

Silicon PNP Darlington Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BDV66 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDV66/A/B/C
DESCRIPTION
·Collector Current -IC= -16A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.0V(Max.)@ IC= -10A
·Complement to Type BDV67/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDV66
-80
VCBO
Collector-Base
Voltage
BDV66A
BDV66B
-100
-120
V
BDV66C
-140
BDV66
-60
VCEO
Collector-Emitter
Voltage
BDV66A
BDV66B
-80
-100
www.DataSheet.net/
V
BDV66C
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-16 A
ICM Collector Current-Peak
-20 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
175
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.625 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/


BDV66 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDV66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV66
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDV66A
BDV66B
IC= -100mA ;IB=0
BDV66C
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA
VBE(on) Base-Emitter On Voltage
ICEO Collector Cutoff Current
IC= -10A ; VCE= -3V
VCE= 1/2VCEOmax; IB= 0
BDV66
VCB= -40V;IE= 0;TJ= 150
ICBO
Collector Cutoff Current
BDV66A
BDV66B
BDV66C
VCB= -50V;IE= 0;TJ= 150
VCB= -60V;IE= 0;TJ= 150
www.DataSheet.net/
VCB= -70V;IE= 0;TJ= 150
ICBO Collector Cutoff Current
VCB= VCBOmax;IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE DC Current Gain
IC= -10A ; VCE= -3V
COB Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest= 1MHz
ton Turn-on Time
toff Turn-off Time
IC= -10A; IB1= -IB2= -40mA;
VCC= 12V
MIN TYP. MAX UNIT
-60
-80
-100
V
-120
-2 V
-2.5 V
-1 mA
-5 mA
-1 mA
-5 mA
1000
300 pF
1 μs
3.5 μs
isc Websitewww.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.co.kr/




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