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Comset Semiconductors |
PNP BDT82 – BDT84 – BDT86 – BDT88
SILICON POWER TRANSISTORS
The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic
envelope.
They are intended for use in audio output stages and general amplifier and switching
appications.
NPN complements are BDT81 – BDT83 – BDT85 – BDT87.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage -IB = 0
www.DataSheet.net/
VCBO
Collector-Base Voltage
-IE = 0
VEBO
IC
ICM
IB
Pt
TJ
TStg
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
-IC = 0
@ TC = 25°
THERMAL CHARACTERISTICS
Value
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
-60
-80
-100
-120
-60
-80
-100
-120
-7
-15
-20
-4
125
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Symbol
Ratings
RthJa
RthJmb
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
09/11/2012
COMSET SEMICONDUCTORS
Value
70
1
Unit
K/W
K/W
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDT82 – BDT84 – BDT86 – BDT88
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICB0 Collector Cutoff Current
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
hFE DC Current Gain (*)
VCE(SAT)
Collector-Emitter
Saturation Voltage (*)
VBE Base-Emitter Voltage (*)
Test Condition(s)
IE=0A, VCB = -60 V
IE=0A, VCB = -80 V
IE=0A, VCB = -100 V
IE=0A, VCB = -120 V
VBE=0, VCE = -60V
VBE=0, VCE = -80V
VBE=0, VCE = -100V
VBE=0, VCE = -120V
VEB= -7 V
IC=0
www.DataSheet.net/
IC= -50mA
VCE= -10V
IC= -5A
VCE= -4V
IC= -5A
IB= -0.5A
IC= -5A
IB= -0.5A
IC= -7A
IB= -0.7A
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Min Typ Max Unit
- - -0.2 mA
- - -1 mA
- - -0.1 mA
40 -
-
-
40 -
-
- - -1
V
- - -1.6
- - -1.5 V
09/11/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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