|
Comset Semiconductors |
NPN BDT81 – BDT83 – BDT85 – BDT87
SILICON POWER TRANSISTORS
The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic
envelope.
They are intended for use in audio output stages and general amplifier and switching
appications.
PNP complements are BDT82 – BDT84 – BDT86 – BDT88.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage IB = 0
www.DataSheet.net/
VCBO
Collector-Base Voltage
IE = 0
VEBO
IC
ICM
IB
Pt
TJ
TStg
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IC = 0
@ TC = 25°
THERMAL CHARACTERISTICS
Value
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
60
80
100
120
60
80
100
120
7
15
20
4
125
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Symbol
Ratings
RthJa
RthJmb
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
09/11/2012
COMSET SEMICONDUCTORS
Value
70
1
Unit
K/W
K/W
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BDT81 – BDT83 – BDT85 – BDT87
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICB0 Collector Cutoff Current
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
hFE DC Current Gain (*)
VCE(SAT)
Collector-Emitter
Saturation Voltage (*)
VBE Base-Emitter Voltage (*)
Test Condition(s)
IE=0A, VCB = 60 V
IE=0A, VCB = 80 V
IE=0A, VCB = 100 V
IE=0A, VCB = 120 V
VBE=0, VCE = 60V
VBE=0, VCE = 80V
VBE=0, VCE = 100V
VBE=0, VCE = 120V
VEB= 7 V
IC=0
www.DataSheet.net/
IC= 50mA
VCE= 10V
IC= 5A
VCE= 4V
IC= 5A
IB= 0.5A
IC= 5A
IB= 0.5A
IC= 7A
IB= 0.7A
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
Min Typ Max Unit
- - 0.2 mA
- - 1 mA
- - 0.1 mA
40 -
-
-
40 -
-
- -1
V
- - 1.6
- - 1.5 V
09/11/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
|