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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDT64/A/B/C
DESCRIPTION
·Collector Current -IC= -12A
·High DC Current Gain-hFE= 1000(Min)@ IC= -5A
·Complement to Type BDT65/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT64
-60
VCER
Collector-Emitter
Voltage
BDT64A
BDT64B
-80
-100
V
BDT64C
-120
BDT64
-60
VCEO
Collector-Emitter
Voltage
BDT64A
BDT64B
-80
-100
V
www.DataSheet.net/
BDT64C
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
ICM Collector Current-Peak
-20 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
125
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1 ℃/W
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDT64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT64
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT64A
BDT64B
IC= -30mA ;IB=B 0
BDT64C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
VBE(on)
VECF-1
Base-Emitter On Voltage
C-E Diode Forward Voltage
IC= -5A ; VCE= -4V
IF= -5A
VECF-2
ICEO
ICBO
IEBO
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IF= -12A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
V = / V ;I = 0;T = 150℃CB
1
2
CBOmaxwww.DataSheet.net/
E
C
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -4V
hFE-2
DC Current Gain
IC= -5A ; VCE= -4V
hFE-3
DC Current Gain
IC= -12A ; VCE= -4V
COB Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest=1MHz
ton Turn-On Time
toff Turn-Off Time
IC= -5A; IB1= -IB2= -20mA;
VCC= -30V
MIN TYP. MAX UNIT
-60
-80
-100
V
-120
-2.0 V
-3.0 V
-2.5 V
-2.0 V
-2.0 V
-0.2 mA
-0.4
-2.0
mA
-5 mA
1500
1000
750
200 pF
0.5 2 μs
2.5 5 μs
isc Website:www.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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