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BDT64C 반도체 회로 부품 판매점

Silicon PNP Darlington Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BDT64C 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDT64/A/B/C
DESCRIPTION
·Collector Current -IC= -12A
·High DC Current Gain-hFE= 1000(Min)@ IC= -5A
·Complement to Type BDT65/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT64
-60
VCER
Collector-Emitter
Voltage
BDT64A
BDT64B
-80
-100
V
BDT64C
-120
BDT64
-60
VCEO
Collector-Emitter
Voltage
BDT64A
BDT64B
-80
-100
V
www.DataSheet.net/
BDT64C
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
ICM Collector Current-Peak
-20 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
125
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/


BDT64C 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDT64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT64
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT64A
BDT64B
IC= -30mA ;IB=B 0
BDT64C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
VBE(on)
VECF-1
Base-Emitter On Voltage
C-E Diode Forward Voltage
IC= -5A ; VCE= -4V
IF= -5A
VECF-2
ICEO
ICBO
IEBO
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IF= -12A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
V = / V ;I = 0;T = 150CB
1
2
CBOmaxwww.DataSheet.net/
E
C
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -4V
hFE-2
DC Current Gain
IC= -5A ; VCE= -4V
hFE-3
DC Current Gain
IC= -12A ; VCE= -4V
COB Output Capacitance
Switching times
IE= 0 ; VCB= -10V; ftest=1MHz
ton Turn-On Time
toff Turn-Off Time
IC= -5A; IB1= -IB2= -20mA;
VCC= -30V
MIN TYP. MAX UNIT
-60
-80
-100
V
-120
-2.0 V
-3.0 V
-2.5 V
-2.0 V
-2.0 V
-0.2 mA
-0.4
-2.0
mA
-5 mA
1500
1000
750
200 pF
0.5 2 μs
2.5 5 μs
isc Websitewww.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.co.kr/




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