(PDF) BDT64B Datasheet - Silicon PNP Darlington Power Transistor

Número de pieza	BDT64B
Descripción	Silicon PNP Darlington Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BDT64/A/B/C DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 V BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 V www.DataSheet.net/ BDT64C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A IBB Base Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.5 125 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1 ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF BDT64B Data sheet ( Hoja de datos )