파트넘버.co.kr BDT63 데이터시트 PDF


BDT63 반도체 회로 부품 판매점

Silicon NPN Darlington Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BDT63 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63/A/B/C
DESCRIPTION
·Collector Current -IC= 10A
·High DC Current Gain-hFE= 1000(Min)@ IC= 3A
·Complement to Type BDT62/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63
60
VCER
Collector-Emitter
Voltage
BDT63A
BDT63B
80
100
V
BDT63C
120
BDT63
60
VCEO
Collector-Emitter
Voltage
BDT63A
BDT63B
80
100
V
www.DataSheet.net/
BDT63C
120
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
0.25
90
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/


BDT63 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT63
60
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT63A
BDT63B
IC= 30mA ;IB=B 0
80
V
100
BDT63C
120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 12mA
2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 80mA
2.5 V
VBE(on) Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 3A ; VCE= 3V
IF= 3A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
V = / V ;I = 0;T = 150CB
1
2
www.DataSheet.net/
CBOmax
E
C
VEB= 5V; IC=0
2.5 V
2.0 V
0.5 mA
0.2
2.0
mA
5 mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
3000
COB Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest= 1MHz
100 pF
ton Turn-On Time
toff Turn-Off Time
IC= 3A; IB1= -IB2= 12mA;
VCC= 10V
1.0 2.5 μs
5.0 10 μs
isc Websitewww.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.co.kr/




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BDT63 transistor

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