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Comset Semiconductors |
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,
and analogue switching application.
NPN complements are BD895 - BD897 - BD899 - BD901
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
www.DataSheet.net/
VEBO
Emitter-Base Voltage
IC Collector Current
IB Base Current
PT Power Dissipation
TJ Junction Temperature
Ts Storage Temperature range
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Tc = 25°
Ta = 25°
Value
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-300
70
2
150
-65 to +150
Unit
V
V
V
A
mA
Watts
°C
25/09/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICEO
IEBO
VCEO
VCE(SAT)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
Collector-Emitter
Breakdown Voltage
(*)
Collector-Emitter
saturation Voltage (*)
IE= 0
VCB = -45 V
IE= 0
VCB = -60 V
IE= 0
TC=25°C
VCB = -80 V
IE= 0
VCB = -100 V
IE= 0
VCB = -45 V
IE= 0
VCB = -60 V TC=100°
IE= 0
C
VCB = -80 V
IE= 0
VCB = -100 V
I = 0, V = - 30 VE CE
www.DataSheet.net/
IE= 0, VCE = - 30 V
IE= 0, VCE = - 40 V
IE= 0, VCE = - 50 V
VEB= -5 V, IC= 0
IC= -100 mA, IB= 0
IC= -3 A, IB= -12 mA
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Min Typ Max Unit
- - -0.2 mA
- - -2 mA
- - -0.5 mA
- - -2 mA
-45
-60
-80
-100
-
-
-
-
-
-
-
V
-
- - -2.5 V
25/09/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
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