BD900 반도체 회로 부품 판매점
(BD900 / BD902) Silicon PNP Power Transistors
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 Inchange Semiconductor |
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896/898/900/902
DESCRIPTION
With TO-220C package
Complement to type BD895/897/899/901
DARLINGTON
APPLICATIONS
For use in output stages in audio equipment,
general amplifier,and analogue switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD896
VCBO
Collector-base voltage
BD898
BD900
BD902
BD896
VCEO
BD898
Collector-emitter voltage
BD900
BD902
VEBO
Emitter-base voltage
IC Collector current-DC
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
www.DataSheet.net/
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-300
70
2
150
-65~150
UNIT
V
V
V
A
mA
W
Datasheet pdf - http://www.DataSheet4U.co.kr/
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896/898/900/902
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD896
V(BR)CEO
Collector-emitter
breakdown voltage
BD898
BD900
IC=-100mA, IB=0
BD902
VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-12mA
VBE Base-emitter on voltage
IC=-3A ; VCE=-3V
BD896
VCB=-45V, IE=0
TC=100
ICBO
Collector cut-off current
BD898
BD900
VCB=-60V, IE=0
TC=100
VCB=-80V, IE=0
TC=100
BD902
VCB=-100V, IE=0
TC=100
ICEO
BD896
Collector cut-off current
BD898
BD900
VCE=-30V, IB=0
www.DataSheet.net/
VCE=-30V, IB=0
VCE=-40V, IB=0
BD902 VCE=-50V, IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-3A ; VCE=-3V
VEC Diode forward voltage
IE=-8A
ton Turn-on time
toff Turn-off time
IC=-3A ; IB1=-IB2=-12mA
VBE=3.5V;RL=10 ;tp=20 s
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-2.5 V
-2.5 V
-0.2
-2.0
-0.2
-2.0
mA
-0.2
-2.0
-0.2
-2.0
-0.5 mA
-2 mA
750
-3.5 V
1s
5s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MAX
1.79
UNIT
/W
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Inchange Semiconductor
( isc )
BD900 transistor
데이터시트 다운로드 :
[ BD900.PDF ]
[ BD900 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BD900
PNP SILICON POWER DARLINGTONS - TRSYS
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BD900
(BD900 / BD902) Silicon PNP Power Transistors - Inchange Semiconductor
BD900
(BD900 / BD902) Silicon NPN Power Transistors - Comset Semiconductors
BD9001F
Flexible Step-Down Switching Regulator - ROHM Semiconductor
BD9002HFP
Flexible Step-Down Switching Regulator - ROHM Semiconductor
BD900A
PNP SILICON POWER DARLINGTONS - Power Innovations Limited
BD900A
SILICON POWER TRANSISTOR - SavantIC