파트넘버.co.kr BD684A 데이터시트 PDF


BD684A 반도체 회로 부품 판매점

SILICON DARLINGTON POWER TRANSISTORS



Comset Semiconductors 로고
Comset Semiconductors
BD684A 데이터시트, 핀배열, 회로
PNP BD684 – BD684A
SILICON DARLINGTON POWER TRANSISTORS
The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for
audio and video applications.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD683 and BD683A.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IBM
PT
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current peak value
Total power Dissipation
Junction Temperature
Storage Temperature
www.DataSheet.net/
@ Tmb = 25°C
IC
ICM
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-mb
RthJ-a
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
-120
-120
-5
-4
-6
-0.1
40
150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
Value
3.12
100
Unit
K/W
K/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


BD684A 데이터시트, 핀배열, 회로
PNP BD684 – BD684A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
ICEO
IEBO
VCE(SAT)
Collector cut-off current
IE=0, VCB= -120 V
IE=0, VCB= -120V, Tj= 150°C
Collector cut-off current
IB=0,VCE= -1/2VCEOMAX
Emitter cut-offcurrent
IC=0, VEB=-5 V
IC=-1.5 A
Collector-Emitter saturation IB=-30 mA
BD683
Voltage (*)
IC=-2 A, IB=-40 mA BD683A
-
-
-
-
-
-
-
-
-0,2
-2
mA
- -0,5 mA
- -5 mA
- -2,5
V
- -2,8
hFE DC Current Gain (*)
VCE=-3 V, IC=-1.5 A
VCE=-3 V, IC=-2 A
BD683
BD683A
750
-
-
-
VBE
Base-Emitter Voltage (*)
VCE=-3 V, IC=-1.5 A BD683
VCE=-3 V, IC=-2 A BD683A
-
- -2,5 V
hfe
Small signal current gain VCE=-3 V, IC=-1.5 A, f= 1 MHz 10
-
-
-
fhfe Ut-off frequency
VCE=-3 V, IC=-1.5 A
- 60 - kHz
V Diode forward voltage I =-1,5 AF
F
www.DataSheet.net/
- -1,5 -
V
I(SB)
Second-breakdown
collector current
VCE=-50 V, tP= 20ms, non rep.
without heatsink
-0,8
-
-
A
ton Turn-on time
toff Turn-off time
Icon= -1.5A, Ibon= -Iboff= -6mA
VCC=-30V
-
-
0,8
4,5
2
8
µs
(*) Measured under pulse conditions :tP <300µs, δ <2%.
23/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/




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제조업체: Comset Semiconductors

( comsets )

BD684A transistor

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