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Comset Semiconductors |
NPN BD675/A - BD677/A - BD679/A - BD681/A
SILICON DARLINGTON POWER TRANSISTORS
The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126
plastic package.
They are eptaxial-base transistors in monolithic Darlington circuit for audio and video
applications.
PNP complements are BD676/A - BD678/A - BD680/A - BD682/A
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC
IB
PT
TJ
TStg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
BD675/A
BD677/A
BD679/A
BD681/A
BD675/A
www.DataSheet.net/
BD677/A
BD679/A
BD681/A
IC
ICM
IBM
@ Tmb = 25°C
Value
45
60
80
100
45
60
80
100
5
4
6
0.1
40
150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-mb
RthJ-a
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
3.12
100
Unit
V
V
V
A
A
W
°C
°C
Unit
K/W
K/W
23/10/2012
COMSET SEMICONDUCTORS
1 |3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BD675/A - BD677/A - BD679/A - BD681/A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICEO
IEBO
VCEO(SUS)
VCE(SAT)
hFE
VBE
hfe
fhfe
VF
I(SB)
Collector cut-off
current
Collector cut-off
current
Emitter cut-
offcurrent
Collector-Emitter
sustaning Voltage
Collector-Emitter
saturation Voltage
DC Current Gain
Base-Emitter
Voltage(1&2)
Small signal
current gain
Ut-off frequency
Diode forward
voltage
Second-
breakdown
collector current
IE=0 , VCB= 60 V
IE=0 , VCB= 80 V
IE=0 , VCB= 100 V
IE=0 , VCB= 120 V
IE=0 ,VCB = 30V, Tj= 150°C
IE=0 ,VCB = 40V, Tj= 150°C
IE=0 ,VCB = 50V, Tj= 150°C
IE=0 ,VCB = 60V, Tj= 150°C
IB=0 , VCE= ½VCEOMAX
IB=0 , VCE= ½VCEOMAX
IB=0 , VCE= ½VCEOMAX
IB=0 , VCE= ½VCEOMAX
BD675/A
BD677/A
BD679/A
BD681/A
BD675/A
BD677/A
BD679/A
BD681/A
BD675/A
BD677/A
BD679/A
BD681/A
IC=0, -VEB=5 V
BD675/A
IB=0 , IC=50 mA
BD677/A
BD679/A
www.DataSheet.net/
BD681/A
BD675, BD677, BD679, BD681
IC=1.5 A,IB=30 mA
BD675A, BD677A, BD679A, BD681A
IC=2 A,IB=40 mA
BD675, BD677, BD679, BD681
VCE=3 V, IC=500 mA
BD675, BD677, BD679, BD681
VCE=3 V, IC=1,5 A
BD675, BD677, BD679, BD681
VCE=3 V, IC=4 A
BD675A, BD677A, BD679A, BD681A
VCE=3 V, IC=2 A
BD675, BD677, BD679, BD681
VCE=3 V, IC=1,5 A
BD675A, BD677A, BD679A, BD681A
VCE=3 V, IC=2 A
VCE=3 V, IC=1,5 A, f= 1 MHz
VCE=3 V, IC=1,5 A
IF=1,5 A
-VCE=50 V, tP= 20ms,non rep., without
heatsink
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
45
60
80
100
-
-
-
750
-
750
-
-
10
-
-
0,8
Typ Max
- 0,2
- 0,2
- 0,2
- 0,2
-2
-2
-2
-2
- 0,5
- 0,5
- 0,5
- 0,5
-5
--
--
--
--
- 2,5
- 2.8
2200 -
--
1500 -
--
- 2,5
- 2.5
--
60 -
1,5 -
--
Unit
mA
mA
mA
V
V
V
kHz
V
A
23/10/2012
COMSET SEMICONDUCTORS
2 |3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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