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Comset Semiconductors |
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intended for output stages in audio equipment, general amplifiers, and analogue
switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
www.DataSheet.net/
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICM Collector Peak Current
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
60
80
100
120
140
45
60
80
100
120
5
8
12
Unit
V
V
V
A
A
17/10/2012
COMSET SEMICONDUCTORS
1|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BD643
BD645
IB Base Current
BD647
BD649
300
BD651
BD643
BD645
PT
Power Dissipation
@ Tmb < 25°
BD647
62.5
BD649
BD651
BD643
BD645
TJ Junction Temperature
BD647
BD649
150
BD651
www.DataSheet.net/
BD643
BD645
Ts Storage Temperature range
BD647 -65 to +150
BD649
BD651
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Unit
mA
Watts
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
RthJ-A
From junction to mounting base
From junction to ambient in free air
Value
2
62.5
Unit
K/W
K/W
17/10/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
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