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SeCoS |
Elektronische Bauelemente
BD439/BD441
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126
Features
8.0±0.2
3.2±0.2
2.0±0.2
* Amplifier and switching applications
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
1.4±0.1
12 3
MAXIMUM RATINGS* TA=25 oC unless otherwise noted
Symbol
Paramete
Value
Units
VCBO
Collector-Base Voltage
BD439
BD441
60
80
V
VCEO
Collector-Emitter Voltage
BD439
BD441
60
80
V
VEBO
Emitter-Base Voltage
5V
IC Collector Current –Continuous
4A
PC Collector Dissipation
TJ Junction Temperature
Tstg Storage Temperature
1.25
150
-55-150
W
oC
oC
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)www.DataSheet.net/
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO Ic=100μA,IE=0
BD439
BD441
60
80
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO Ic=100mA,IB=0
V(BR)EBO IE=100μA,IC=0
BD439
BD441
60
80
5
Collector cut-off current
VCB=60V,IE=0
ICBO
VCB=80V,IE=0
BD439
BD441
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1)
hFE(2)
hFE(3)
VEB=5V,IE=0
VCE=1V,IC=500mA
VCE=5V,IC=10mA
VCE=1V,IC=2A
VCE(sat)
VBE
IC=3A,IB=0.3A
VCE=1V,IC=2A
BD439
BD441
BD439
BD441
40
20
15
25
15
Transition frequency
fT VCE=1V,IC=250mA
3
MAX UNIT
V
V
V
100 μA
1 mA
475
0.8 V
1.1 V
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
Elektronische Bauelemente
Typical Characteristics
BD439/BD441
NPN Type
Plastic Encapsulate Transistors
BD439,441
www.DataSheet.net/
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2of 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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