(PDF) BD246C Datasheet - PNP SILICON POWER TRANSISTORS

Número de pieza	BD246C
Descripción	PNP SILICON POWER TRANSISTORS
Fabricantes	Comset Semiconductors
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No Preview Available ! BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IC = -30mA) VCER VEBO IC IB PT TJ TS www.DataSheet.net/ Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C IC ICM Tmb = 25° C Value -45 -60 -80 -100 -55 -70 -90 -115 -5.0 -10 -15 -3 80 -65 to +150 -65 to +150 Unit V V V A A Watts °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Junction to Case Thermal Resistance Junction to free air Thermal Resistance Value 1.56 42 Unit °C / W °C / W 25/09/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF BD246C Data sheet ( Hoja de datos )