파트넘버.co.kr BD246A 데이터시트 PDF


BD246A 반도체 회로 부품 판매점

PNP SILICON POWER TRANSISTORS



Comset Semiconductors 로고
Comset Semiconductors
BD246A 데이터시트, 핀배열, 회로
BD246, A, B, C
PNP SINGLE-DIFFUSED MESA SILICON POWER
TRANSISTORS
The BD246 series are PNP power transistors in a TO3PN envelope.
They are the power transistors for power amplifier and high-speed-switching applications.
The complementary is BD245, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (IC = -30mA)
VCER
VEBO
IC
IB
PT
TJ
TS
www.DataSheet.net/
Collector-Emitter Voltage (RBE = 100 )
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
IC
ICM
Tmb = 25° C
Value
-45
-60
-80
-100
-55
-70
-90
-115
-5.0
-10
-15
-3
80
-65 to +150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
THERMAL CHARACTERISTICS
Symbol
RthJC
RthJA
Ratings
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
Value
1.56
42
Unit
°C / W
°C / W
25/09/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/


BD246A 데이터시트, 핀배열, 회로
BD246, A, B, C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
ICES
ICEO
IEBO
VCEO
hFE
VCE(SAT)
VBE
hfe
|hfe|
VCE = -55 V , VBE = 0 BD246
Collector- Emitter
Cut-off Current
VCE = -70 V , VBE = 0 BD246A
VCE = -90 V , VBE = 0 BD246B
- - -0.4 mA
VCE = -115 V , VBE = 0 BD246C
Collector Cut-off
Current
VCE = -30 V , IB = 0
VCE = -60 V , IB = 0
BD246
BD246A
BD246B
BD246C
- - -0.7 mA
Emitter Cut-off
Current
VE B = -5 V , IC = 0
- - -1 mA
Collector- Emitter
Breakdown Voltage
(*)
IC = -30 mA, IB = 0
BD246
BD246A
BD246B
BD246C
-45
-60
-80
-100
-
-
-
-
-
-
-
V
-
VCE = -4 V, IC = -1 A
40 -
-
DC Current Gain (*) VCE = -4 V, I C= -3 A
20 - - -
V = -4 V, I = -10 ACE
C
www.DataSheet.net/
4- -
Collector-Emitter
IC = -3 A, IB = -300 mA
saturation Voltage (*) IC = -10 A, IB = -2.5 A
-
-
-
-
-1
-4
V
Base-Emitter
Voltage(*)
VCE = -4 V, IC = -3 A
VCE = -4 V, IC = -10 A
-
-
-
-
-1.6
-3
V
Small Signal forward
Current Transfer ratio
VCE = -10 V, IC = -500 mA, f = 1MHz
Small Signal forward
Current Transfer ratio
VCE = -10 V, IC = -500 mA, f = 1MHz
20
3
-
-
-
-
-
RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE
TEMPERATURE
Symbol
Ratings
Turn-on Time
ton
toff Turn-off Time
25/09/2012
Test Condition(s)
Min
IC = -1 A , IB(on) = -100 mA , IB(off) =
100 mA
VBE(off) = 3.7 V , RL = 20 Ω , tp = 20
µs
dc < 2%
IC = -1 A , IB(on) = -100 mA , IB(off) =
100 mA
VBE(off) = 3.7 V , RL = 20 Ω , tp = 20
µs
dc < 2%
-
-
Typ Mx Unit
0.2 - µs
0.8 -
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/




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제조업체: Comset Semiconductors

( comsets )

BD246A transistor

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